Auction-Stackelberg game framework for access permission in femtocell networks with multiple network operators

With the explosive growth of indoor data traffic in forthcoming fifth generation cellular networks, it is imperative for mobile network operators to improve network coverage and capacity. Femtocells are widely recognized as a promising technology to address these demands. As femtocells are sold or loaned by a mobile network operator (MNO) to its residential or enterprise customers, MNOs usually employ refunding scheme to compensate the femtocell holders (FHs) providing indoor access to other subscribers by configuring the femtocell to operate in open or hybrid access mode. Due to the selfishness nature, competition between network operators as well as femtocell holders makes it challenging for operators to select appropriate FHs for trading access resources. This inspires us to develop an effective refunding framework, with aim to improve overall network resource utilization, through promoting FHs to make reasonable access permission for well-matched macro users. In this paper, we develop a two-stage auction–Stackelberg game (ASGF) framework for access permission in femtocell networks, where MNO and mobile virtual network operator lease access resources from multiple FHs. We first design an auction mechanism to determine the winner femtocell that fulfils the access request of macro users. We next formulate the access permission problem between the winner femtocell and operators as a Stackelberg game, and theoretically prove the existence of unique equilibrium. As a higher system payoff can be gained by improving individual players’ payoff in the game, each player can choose the best response to others’ action by implementing access permission, while avoiding solving a complicated optimization problem. Numerical results validate the effectiveness of our proposed ASGF based refunding framework and the overall network efficiency can be improved significantly

Pressure induced superconductivity bordering a charge-density-wave state in NbTe4 with strong spinorbit coupling

Transition-metal chalcogenides host various phases of matter, such as charge-density wave (CDW), superconductors, and topological insulators or semimetals. Superconductivity and its competition with CDW in low-dimensional compounds have attracted much interest and stimulated considerable research. Here we report pressure induced superconductivity in a strong spin-orbit (SO) coupled quasi-one-dimensional (1D) transition-metal chalcogenide NbTe$_4$, which is a CDW material under ambient pressure. With increasing pressure, the CDW transition temperature is gradually suppressed, and superconducting transition, which is fingerprinted by a steep resistivity drop, emerges at pressures above 12.4 GPa. Under pressure $p$ = 69 GPa, zero resistance is detected with a transition temperature $T_c$ = 2.2 K and an upper critical field $H_{c2}$= 2 T. We also find large magnetoresistance (MR) up to 102\% at low temperatures, which is a distinct feature differentiating NbTe$_4$ from other conventional CDW materials.Comment: https://rdcu.be/LX8

Tuning Magnetic and Transport Properties in Quasi-2D (Mn1−xNix)2P2S6 Single Crystals

We report an optimized chemical vapor transport method to grow single crystals of (Mn1−xNix)2P2S6 where x = 0, 0.3, 0.5, 0.7, and 1. Single crystals up to 4 mm × 3 mm × 200 μm were obtained by this method. As-grown crystals are characterized by means of scanning electron microscopy and powder X-ray diffraction measurements. The structural characterization shows that all crystals crystallize in monoclinic symmetry with the space group C2/m (No. 12). We have further investigated the magnetic properties of this series of single crystals. The magnetic measurements of the all as-grown single crystals show long-range antiferromagnetic order along all principal crystallographic axes. Overall, the Néel temperature TN is non-monotonous; with increasing Ni2+ doping, the temperature of the antiferromagnetic phase transition first decreases from 80 K for pristine Mn2P2S6 (x = 0) up to x = 0.5 and then increases again to 155 K for pure Ni2P2S6 (x = 1). The magnetic anisotropy switches from out-of-plane to in-plane as a function of composition in (Mn1−xNix)2P2S6 series. Transport studies under hydrostatic pressure on the parent compound Mn2P2S6 evidence an insulator-metal transition at an applied critical pressure of ~22 GPa